Raw Power al Final Review Meeting del progetto YESvGaN
On 27 and 28 November, we attended the final meeting of the European project @YESvGaN – Wide band gap at silicon cost at the Bosch Research Campus in Renningen, Germany. The 3-year project, involving 22 partners from 7 countries, developed vertical gallium nitride (GaN) transistors for applications in key sectors such as data centers, photovoltaics, and electric traction.
The contribution of Raw Power
We worked in Work Package 6, focusing on the application aspects of WBG devices. In particular, we designed and built a laboratory-scale three-phase demonstrator for photovoltaic applications, specifically testing efficiency and reducing energy losses.
Collaboration and results
We have worked with top-level partners to help achieve innovative results—special thanks to Bosch for the impeccable coordination of the project.
This project demonstrates how European cooperation is accelerating the adoption of more efficient and sustainable technologies.
